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The wide bandgap 4H-SiC semiconductor material exhibits several intrinsic properties - namely, excellent radiation hardness, thermal stability, and high breakdown voltage - that make it a promising candidate for deployment in high-radiation environments. Recent advances in its industrial-scale production have further enhanced its attractiveness for high-energy physics applications.
This contribution presents an overview of the development and characterization of $\mbox{4H-SiC-based}$ sensors produced by the onsemi company based in the Czech Republic. The study includes the evaluation of 4H-SiC PN diodes and Low Gain Avalanche Detectors (LGADs) featuring an internal charge multiplication layer. Electrical and detection characterization covers the dependence of reverse leakage current and bulk capacitance on the applied depletion voltage, internal gain measurements using UV light sources, and the first Transient Current Technique (TCT) and beta source studies employing UV lasers and $^{90}$Sr source, respectively.
Radiation tolerance was assessed through irradiation of 4H-SiC PN and LGAD samples with 24 GeV protons at CERN IRRAD facility and gamma particles from the $^{60}$Co source at UJP Praha a.s., reaching total fluences and ionizing doses up to 5.2E15 1 MeV n$_{eq}$/cm$^2$ and 2.5 MGy for protons, and 0.3 MGy for gamma particles. Additional insight into radiation-induced effects was gained by subjecting the biased 4H-SiC MOSFET transistors to 24 GeV protons and $^{60}$Co gamma particles. The obtained results provide new perspectives on the radiation hardness of 4H-SiC devices and underscore their potential for future use in demanding environments typical for next-generation high-energy physics experiments.
