TCAD simulation of p-MCz Si LGAD equipped with MGR irradiated up to a mixed fluence of 1 x 1017 neq./cm2

16 Nov 2025, 09:10
10m
2F, Activities Center (Academia Sinica)

2F, Activities Center

Academia Sinica

128 Section 2, Academia Road, Nankang, Taipei 115201, Taiwan
POSTER Avalanche-based Sensors ALL Poster

Speaker

AJAY SRIVASTAVA (CHANDIGARH UNIVERSITY)

Description

Radiation hard LGAD as a MTD detectors requires for the 4D tracking with the process of assigning a space and a time coordinate to a hit -~10-30 μm position and ~10-30 ps time resolution in the CMS phase 2 of the experiment for HL-LHC upgrade and FCC colliders. To improve the performance of the heavily irradiated LGAD detectors up to the mixed fluence of 1 x 1017 neq./cm2 in terms of high fill factor with the reduced dead space without any avalanche breakdown, and full depletion voltage <800V is the crucial requirement for the detector to achieve the aforesaid criteria. In this contribution, TCAD simulation has been used to perform the full device optimization using surface and four level deep trap p-MCz mixed radiation damage model for the experiments and extrapolate the data taken into account the PerguiaModDoping acceptor removal model in the SRH and CCE modeling of the irradiated detectors for the data as per the experiment up to -400C. The electric field, electron concentration in the EAL layer and space charge distributions are shown inside the detectors around the trench and JTE extension to illustrate the reasons for the possible innovations and technological improvement in the gain of the irradiated LGAD devices.

Authors

AJAY SRIVASTAVA (CHANDIGARH UNIVERSITY) Ms Puspita Chatterjee (CHANDIGARH UNIVERSITY)

Presentation materials