Speaker
Description
The recent years have witnessed a growing interest in ultra-fast semiconductor sensors for time-resolved synchrotron light applications. Of special consideration are the Low Gain Avalanche Diodes (LGADs) which provide picosecond timing resolution and an internal gain mechanism, suitable to explore the fast repetition rates of hundreds of MHz and the high photon flux, low energy regime of the 4th generation synchrotron light sources. This work describes the recent results on the characterization of HPK LGAD 2x2 pads array prototypes performed at SIRIUS, the new Brazilian synchrotron light source,developed at the Center for Research in Energy and Materials (CNPEM) and operated by the National Synchrotron Light Laboratory (LNLS), where pulsed X-ray beams (10 ps width, 500 MHz repetition rate) with energies ranging from 6 to 12 keV and collimated from 300 $\mu$m down to 150 nm were used to extract the timing, energy response and gain of these devices under several operating conditions – such as temperature and operating bias voltage – using single and multiple pads response. Sensor signals were digitized by a fast oscilloscope triggered by a low jitter signal from the accelerator or by a coincidence from multiple photon conversions from an X-ray pulse happening at two adjacent pads in the array.
