Research of the impact of electrostatic charge on the surface of silicon strip sensors

18 Nov 2025, 11:10
20m
2F, Activities Center (Academia Sinica)

2F, Activities Center

Academia Sinica

128 Section 2, Academia Road, Nankang, Taipei 115201, Taiwan
ORAL Pixel and Strip Sensors 1. Pixel and Strip Sensors

Speaker

Qinze Li (Institute of High Energy Physics (IHEP), Chinese Academy of Sciences)

Description

The Alpha Magnetic Spectrometer (AMS-02) is a particle detector that operates on the International Space Station (ISS), aiming to search for antimatter and dark matter by performing precision measurements of cosmic ray composition and flux. In order to increase physics sensitivity, a new layer(L0) of silicon strip tracker was planned to be installed on top of AMS-02 to improve cosmic ray acceptance and heavy ions resolution. This tracking layer consists of two planes of silicon strip detectors, each composed of 36 units called "ladders". Each ladder is composed of a readout PCB board and 8, 10, or 12 silicon strip sensors. During the construction and quality control phases of the ladders, we observed that electrostatic charges on the passivation layer of silicon strip sensors can significantly increase the electronic noise level of the affected readout channels.

Firstly, we introduce the design of the silicon strip detector sensor and the ladder. Then, how we mimic the procedure to generate electrostatic charge on the surface of the sensor is presented. Detailed measurements of the readout electronics noise level and charge collection efficiency were carried out for normal and contaminated channels. The TCAD simulation of the silicon strip sensor and the SPICE simulation for readout circuits were used to help understand the mechanism of the impact of the static charge on the detector performance. And finally, the setups for eliminating the effect on the strip sensor will be shown.

Authors

Daojin Hong (Shandong Institute of Advanced Technology (SDIAT) (CN)) Dexing Miao (Institute of High Energy Physics (IHEP), Chinese Academy of Sciences) Hongbo Wang (Shandong Institute of Advanced Technology (SDIAT) (CN)) Jiangchun Wang Liangchenglong Jin (The Institute of High Energy Physics of the Chinese Academy of Sciences (CN)) Mengke Cai (Institute of High Energy Physics (IHEP), Chinese Academy of Sciences) Pingcheng Liu (Shandong Institute of Advanced Technology (SDIAT) (CN)) Qinze Li (Institute of High Energy Physics (IHEP), Chinese Academy of Sciences) Suyu Xiao (The Institute of High Energy Physics of the Chinese Academy of Sciences (CN)) Yuan Yuan (Institute of High Energy Physics (IHEP), Chinese Academy of Sciences) Yuman Cai (Institute of High Energy Physics (IHEP), Chinese Academy of Sciences) Zijun Xu (Institute of High Energy Physics (IHEP), Chinese Academy of Sciences)

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