Speaker
Description
Silicon is widely used as a sensor material in a broad range of imaging applications. In recent high-energy and high-intensity beam experiments, however, a high level of radiation tolerance has become essential. As a result, new semiconductor detectors composed of radiation-hard materials have been actively investigated. The Cu(In,Ga)Se₂ (CIGS) semiconductor is expected to offer excellent radiation tolerance, with the capability to recover from radiation-induced damage through the compensation of defects by ions.
In our study, we successfully detected Xe ions using a fabricated CIGS detector and confirmed that radiation damage could be mitigated through heat treatment. Furthermore, we investigated the recovery mechanism by measuring defects using Deep Level Transient Spectroscopy (DLTS).
Until now, our work has focused on CIGS samples with thicknesses of 2–5 $\mu$m, which are insufficient for depositing enough energy to detect a single charged particle. Recently, we successfully fabricated a 25 $\mu$m-thick CIGS sample, and its performance under Xe ion irradiation closely matched expectations.
This presentation will cover the development of the CIGS particle detector and highlight recent advancements in its performance.
