The High-Voltage Monolithic Active Pixel Sensors (HV-MAPS) become an attractive technology option for tracking detectors in high energy physics. This technology combines sensor and readout electronics in a single chip, making it compact and efficient. The development of HVCMOS sensor has mainly been implemented with 180 nm or 130 nm technology in the past decades.
To explore the small node...
Silicon is widely used as a sensor material in a broad range of imaging applications. In recent high-energy and high-intensity beam experiments, however, a high level of radiation tolerance has become essential. As a result, new semiconductor detectors composed of radiation-hard materials have been actively investigated. The Cu(In,Ga)Se₂ (CIGS) semiconductor is expected to offer excellent...
A diamond radiation detector based on a diamond semiconductor has been developed as part of a 3U CubeSat project aiming to measure charged particles (≥ 10 keV) escaping from the Earth’s atmosphere along geomagnetic fields. Diamond is known as an excellent material for semiconductor devices because of a bandgap of 5.5 eV and a carrier mobility of 4000 cm2/Vs at RT. Additionally,...
