Speaker
Description
Radiation-tolerant CMOS active pixel sensors (APS) are demanding for imaging and monitoring systems in high-energy physics facilities, nuclear power plants and aerospace applications. However, the Total Ionizing Dose (TID) effects can significantly degrade image quality due to increased dark current and deteriorated transistors characteristics. This work presents a radiation-hardened CMOS image sensor (CIS) prototype developed in a 180 nm CMOS process, featuring a 1280 × 720 pixel-array with a 10 $\mu\text{m}$ pitch. The design integrates a customized photodiode, in-pixel electronics, and column-parallel 10-bit single-slope analog-to-digital converters. The digitized pixel outputs are formatted into frames, serialized and transmitted via the high-speed LVDS interface. Enclosed Layout Transistors (ELT) are implemented to improve the radiation tolerance of the image sensor. Prototype samples have been irradiated up to 100 Mrad ($SiO_2$). Preliminary test results on dark current and optical response, both before and after irradiation, will be reported.
