Speaker
Description
Detector Physicists around the world are looking for the high
performance of position sensitive detectors for the outer tracker region of
the new and advanced material based detectors, which can be used in the
harsh radiation environment of the Future Circular collider. According to
RD50 collaboration, one of the leading candidates for the detector material
is p-Fz/p-MCz silicon for the bulk, and the design of the multiple guard rings
(MGR) layout at the cut edge of the detector. In this work, we used an
advanced deep trap level proton irradiation model for p-Fz/p-MCz silicon
micro-strip detector, and implemented in the TCAD simulation. The results
are discussed for the high voltage stability of the both design equipped
with MGR using electric field distribution, and electron concentration
profile in the proton irradiated detectors.
