Evaluation of post-irradiation performance of strip sensors affected by low p-stop issue

18 Nov 2025, 14:00
20m
2F, Activities Center (Academia Sinica)

2F, Activities Center

Academia Sinica

128 Section 2, Academia Road, Nankang, Taipei 115201, Taiwan
ORAL Radiation Effects on Detectors 5. Radiation Effects on Detectors

Speakers

Javier Fernandez-Tejero (Institut de Microelectrònica de Barcelona (IMB-CNM, CSIC)) Miguel Ullan (Centro Nacional de Microelectronica (IMB-CNM, CSIC))

Description

During the production of the new ATLAS Inner-Tracker (ITk) strip sensors for the forthcoming High-Luminosity Large Hadron Collider (HL-LHC) upgrade, the collaboration observed indications of low p-stop doping in a few sensor batches. Quality Control measurements of full-size sensors from these batches showed indications of sensor areas with low inter-strip isolation. Detailed studies of Quality Assurance test structures, such as MOS capacitors with p-stop or Punch-Through Protection structures, confirmed the deviation of parameters dependent on the p-stop doping, showing also inhomogeneity within some of the wafers. Although these sensor batches were identified and rejected, the performance of sensors with low p-stop doping after irradiation needs to be evaluated in detail to understand the possible consequences in HL-LHC working conditions.

This work presents a complete characterization of the inter-strip characteristics of full-size and miniature ATLAS ITk strip sensors irradiated with gammas and neutrons, covering a wide range of doses and fluences to disentangle the influence of the ionization and displacement damages on the defective p-stop isolation. The radiation levels ranged from one equivalent to the first days of the ITk detector in working conditions to the end of the 10-year lifetime of the experiment. The results are discussed in detail. The full-size sensors show a clear decrease of the inter-strip resistance for the sensors with low p-stop doping at all irradiation levels. Also, results from miniature sensors irradiated only with gamma doses show that miniature sensors with low p-stop doping reach values below the ATLAS specifications much earlier than standard miniature sensors with normal doping. In contrast, we observe that neutron irradiations increase the inter-strip resistance values for fluences above 4e14 neq/cm2, suggesting that displacement damage dominates over ionization impact for fluences accumulated after only a few months in working conditions, improving the inter-strip isolation and compensating for the deficiencies of low p-stop doping.

Authors

Celeste Fleta (IMB-CNM, CSIC) David Valero (IMB-CNM, CSIC) Igor Mandic (Jozef Stefan Institute (SI)) Jana Kozakova (Institute of Physics, Czech Academy of Sciences) Javier Fernandez-Tejero (Institut de Microelectrònica de Barcelona (IMB-CNM, CSIC)) Jiri Kroll (Institute of Physics of the Czech Academy of Sciences) Jiri Kvasnicka Marcela Mikestikova Miguel Ullan (Centro Nacional de Microelectronica (IMB-CNM, CSIC)) Pavla Federicova Vitaly Fadeyev (University of California, Santa Cruz) Vladimir Cindro (Jozef Stefan Institute (SI)) Yoshinobu Unno (KEK) Èric Bach (IMB-CNM, CSIC)

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