Impact of X-Ray Irradiation on CMOS Sensor Performance

16 Nov 2025, 15:30
10m
2F, Activities Center (Academia Sinica)

2F, Activities Center

Academia Sinica

128 Section 2, Academia Road, Nankang, Taipei 115201, Taiwan
POSTER Radiation Effects on Detectors ALL Poster

Speaker

Prof. Prafulla Behera (IIT Madras)

Description

Next-generation collider experiments will require pixel detectors that can sustain high radiation doses and operate effectively at extreme luminosities. A CMOS depleted monolithic active pixel sensor has been developed with an advanced readout architecture to meet these demands, offering excellent radiation hardness, high-rate capability, fine spatial resolution, and precise timing performance. Before integration into an actual detector system, the sensor must be thoroughly characterized to ensure optimal operation. This work presents studies performed on the sensor following irradiation with an intense X-ray source to assess its performance under such conditions. The latest measurement results will be discussed.

Author

Prof. Prafulla Behera (IIT Madras)

Co-authors

Ms Anusree Vijay (IITM) Mr Ganapati Dash (IIT Madras) Mr Pritam Kalbhor (IITM) Ms Theertha Chembakan (IIT Madras)

Presentation materials

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