Speaker
Description
Strip detectors are populating the outer trackers of high energy particle experiments. They are convenient for covering large areas of sensitive material since they use less power and have fewer readout channels compared to pixels sensors. Nevertheless, they are typically not manufactured using CMOS production lines since they have to be stitched along the implant of the strip and use several reticles to be connected together. For this project, strip detectors were fabricated in a CMOS foundry using different reticles to be stitched several times.
LFoundry produced passive CMOS strip detector using a production line with 150 nm technology, with 150 µm thickness FZ wafer. Those strip sensors have three different strip geometries to study different impacts of the CMOS technology on the strips. The strips have lengths of 2.1 cm and 4.1 cm, using 3 or 5 stitching reticles respectively. This work will show results of 24 GeV proton irradiated passive CMOS strip detectors. The detectors were irradiated at CERN and were tested with different setups, not showing any effect from the strips stitching.
Proving that this technology is feasible for detecting high energy particles opens the door to future large productions of passive CMOS strip detectors and also produce active strip detectors in a commercial foundry.
